Q1: N-Channel
* Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A
* Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel
* Max rDS(on) = 160mΩ at VGS = -4.5V,.

This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Appli.

FDMJ1023PZ

FDMJ1028N

FDM-2B

FDM100-0045SP

FDM21-05QC

FDM2452NZ

FDM3300NZ

FDM3622

FDM606P

FDM6296

FDMA0104

FDMA037N08LC

FDMA1023PZ

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